NPN Bipolar Junction Transistor (BJT) for low-power applications. Features an 80V Collector-Emitter Voltage (VCEO) and 1A Max Collector Current. Offers a 500mV Collector-Emitter Saturation Voltage and 40 minimum hFE. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with 1.6W power dissipation.
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| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.8mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 3.7mm |
| RoHS | Compliant |
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