NPN Bipolar Junction Transistor (BJT) for low-power applications. Features an 80V Collector-Emitter Voltage (VCEO) and 1A Max Collector Current. Offers a 500mV Collector-Emitter Saturation Voltage and 40 minimum hFE. Packaged in a SOT-223 surface-mount case, this RoHS compliant component operates from -65°C to 150°C with 1.6W power dissipation.
PackageSOT-223
MountingSurface Mount
PolarityNPN
Power1.6W
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Technical Specifications
Stmicroelectronics BCP56-16 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Height
1.8mm
hFE Min
40
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.6W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BCP56-16 Datasheet
Download the complete datasheet for Stmicroelectronics BCP56-16 to view detailed technical specifications.
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