NPN silicon bipolar junction transistor in a SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 45V. Offers a minimum hFE of 25 and a collector-emitter saturation voltage of 500mV. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1.25W. Through-hole mount design with tin, matte contact plating. RoHS compliant.
PackageSOT-32
MountingThrough Hole
PolarityNPN
Power1.25W
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Technical Specifications
Stmicroelectronics BD135 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
25
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.25W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
1.25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD135 Datasheet
Download the complete datasheet for Stmicroelectronics BD135 to view detailed technical specifications.
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