NPN bipolar junction transistor (BJT) in a SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 1.25W and a minimum hFE of 40. Operates across a wide temperature range from -65°C to 150°C. Through-hole mount design with tin, matte contact plating. RoHS compliant.
PackageSOT-32
Current Rating1.5A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Stmicroelectronics BD139 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
40
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
1.25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
80V
Width
2.7mm
Compliance
RoHS
Compliant
Reach Status
REACH Unaffected
ECCN
EAR99
Datasheet
Stmicroelectronics BD139 Datasheet
Download the complete datasheet for Stmicroelectronics BD139 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
