NPN bipolar junction power transistor with a 60V collector-emitter voltage and 2A continuous collector current. Features a maximum power dissipation of 25W and a minimum DC current gain (hFE) of 40. Operates across a wide temperature range from -65°C to 150°C, with a gain bandwidth product of 3MHz. Packaged in a TO-126 (SOT-32) through-hole mount configuration, this RoHS compliant component is suitable for various power switching and amplification applications.
Frequency3MHz
PackageSOT-32
Current Rating2A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BD235 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
600mV
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
10.8mm
hFE Min
40
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
2A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
25W
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
60V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD235 Datasheet
Download the complete datasheet for Stmicroelectronics BD235 to view detailed technical specifications.
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