NPN bipolar junction power transistor in a TO-220 package, featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 2A. This through-hole mounted component offers a maximum power dissipation of 2W and operates within a temperature range of -65°C to 150°C. Key electrical specifications include a collector-base voltage of 115V, a collector-emitter saturation voltage of 700mV, and a minimum hFE of 40. The component is RoHS compliant with tin contact plating.
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Stmicroelectronics BD239C technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 115V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 40 |
| Length | 10.4mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 4.6mm |
| RoHS | Compliant |
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