NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 4A and a collector-emitter voltage (VCEO) of 32V. Offers a maximum power dissipation of 36W and a transition frequency of 3MHz. Packaged in a TO-126 plastic package with through-hole mounting. Compliant with RoHS standards.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD435 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD435 Datasheet
Download the complete datasheet for Stmicroelectronics BD435 to view detailed technical specifications.
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