NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 4A and a collector-emitter voltage (VCEO) of 32V. Offers a maximum power dissipation of 36W and a transition frequency of 3MHz. Packaged in a TO-126 plastic package with through-hole mounting. Compliant with RoHS standards.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD435 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
32V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
40
Lead Free
Lead Free
Max Collector Current
4A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
36W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD435 Datasheet
Download the complete datasheet for Stmicroelectronics BD435 to view detailed technical specifications.
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