NPN bipolar junction transistor (BJT) for power applications, featuring a 60V collector-emitter voltage (VCEO) and a 4A maximum collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 750 and a low collector-emitter saturation voltage of 2.5V. Encased in a SOT-32 package with tin matte plating, it operates across a wide temperature range from -65°C to 150°C and supports a maximum power dissipation of 40W. RoHS compliant and lead-free.
PackageSOT-32
Current Rating4A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Stmicroelectronics BD677 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 10.8mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Width | 2.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD677 Datasheet
Download the complete datasheet for Stmicroelectronics BD677 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
