NPN bipolar junction transistor (BJT) for power applications, featuring a 60V collector-emitter voltage (VCEO) and a 4A maximum collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 750 and a low collector-emitter saturation voltage of 2.5V. Encased in a SOT-32 package with tin matte plating, it operates across a wide temperature range from -65°C to 150°C and supports a maximum power dissipation of 40W. RoHS compliant and lead-free.
PackageSOT-32
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD677 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
750
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
40W
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
60V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD677 Datasheet
Download the complete datasheet for Stmicroelectronics BD677 to view detailed technical specifications.
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