NPN Bipolar Junction Transistor (BJT) in a SOT-32 package, designed for power applications. Features a collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of 4A. Offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 40W. Operates across a wide temperature range from -65°C to 150°C, with a low collector-emitter saturation voltage of 2.5V. Through-hole mounting with tin-matte plated contacts.
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Stmicroelectronics BD679 technical specifications.
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.05mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Reach SVHC Compliant | No |
| DC Rated Voltage | 80V |
| Width | 2.9mm |
| RoHS | Compliant |
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