NPN Bipolar Junction Transistor (BJT) in a SOT-32 package, designed for power applications. Features a collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of 4A. Offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 40W. Operates across a wide temperature range from -65°C to 150°C, with a low collector-emitter saturation voltage of 2.5V. Through-hole mounting with tin-matte plated contacts.
PackageSOT-32
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD679 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Height
11.05mm
hFE Min
750
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
40W
Reach SVHC Compliant
No
DC Rated Voltage
80V
Width
2.9mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD679 Datasheet
Download the complete datasheet for Stmicroelectronics BD679 to view detailed technical specifications.
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