NPN bipolar junction power transistor featuring 80V collector-emitter breakdown voltage and 4A continuous collector current. This through-hole mounted component offers a maximum power dissipation of 40W and a minimum DC current gain (hFE) of 750. Designed for a wide operating temperature range from -65°C to 150°C, it is supplied in a SOT-32 package with tin-matte plating and is RoHS compliant.
PackageSOT-32
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD679A technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2.8V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
2.8V
Contact Plating
Tin, Matte
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
750
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
40W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
80V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD679A Datasheet
Download the complete datasheet for Stmicroelectronics BD679A to view detailed technical specifications.
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