NPN bipolar junction transistor (BJT) in a SOT-32 package, designed for through-hole mounting. Features a 100V collector-emitter breakdown voltage and a continuous collector current rating of 4A. Offers a maximum power dissipation of 40W and a minimum hFE of 750. Operates across a temperature range of -65°C to 150°C. RoHS compliant and lead-free.
PackageSOT-32
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD681 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
750
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
40W
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
100V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD681 Datasheet
Download the complete datasheet for Stmicroelectronics BD681 to view detailed technical specifications.
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