PNP Darlington Bipolar Junction Transistor (BJT) designed for through-hole mounting in a SOT-32 package. Features a 100V collector-emitter breakdown voltage and a continuous collector current rating of 4A. Offers a maximum power dissipation of 40W and a minimum DC current gain (hFE) of 750. Operates across a wide temperature range from -65°C to 150°C.
PackageSOT-32
Current Rating-4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD682 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Continuous Collector Current
4A
Current Rating
-4A
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
750
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
40W
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
-100V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD682 Datasheet
Download the complete datasheet for Stmicroelectronics BD682 to view detailed technical specifications.
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