PNP Darlington Bipolar Junction Transistor (BJT) designed for through-hole mounting in a SOT-32 package. Features a 100V collector-emitter breakdown voltage and a continuous collector current rating of 4A. Offers a maximum power dissipation of 40W and a minimum DC current gain (hFE) of 750. Operates across a wide temperature range from -65°C to 150°C.
PackageSOT-32
Current Rating-4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD682 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 10.8mm |
| hFE Min | 750 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 2.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD682 Datasheet
Download the complete datasheet for Stmicroelectronics BD682 to view detailed technical specifications.
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