PNP Bipolar Junction Transistor (BJT) for power switching applications. Features a 60V collector-emitter voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a maximum collector current of 12A and a power dissipation of 75W. Operates within a temperature range of -65°C to 150°C. Packaged in a TO-220 through-hole mount.
Frequency3MHz
PackageTO-220
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD708 technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BD708 |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD708 Datasheet
Download the complete datasheet for Stmicroelectronics BD708 to view detailed technical specifications.
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