PNP Bipolar Junction Transistor (BJT) for power switching applications. Features a 60V collector-emitter voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a maximum collector current of 12A and a power dissipation of 75W. Operates within a temperature range of -65°C to 150°C. Packaged in a TO-220 through-hole mount.
Frequency3MHz
PackageTO-220
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD708 technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1V
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
40
Max Collector Current
12A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BD708
Transition Frequency
3MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD708 Datasheet
Download the complete datasheet for Stmicroelectronics BD708 to view detailed technical specifications.
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