NPN Bipolar Junction Transistor (BJT) for power applications, featuring a 100V collector-emitter breakdown voltage and a 15A continuous collector current rating. This through-hole component, housed in a TO-220-3 package, offers a maximum power dissipation of 90W and a transition frequency of 3MHz. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency3MHz
PackageTO-220-3
Current Rating15A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BD911 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
3V
Contact Plating
Tin
Current Rating
15A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
9.15mm
hFE Min
15
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
15A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
90W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD911 Datasheet
Download the complete datasheet for Stmicroelectronics BD911 to view detailed technical specifications.
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