
Complementary silicon power Darlington transistors designed for high current applications. Featuring a 100V collector-emitter voltage (VCEO) and a maximum collector current of 12A, these NPN transistors offer a maximum power dissipation of 33W. The TO-220-3 package supports both through-hole and surface mount configurations, with a minimum hFE of 100 and a low collector-emitter saturation voltage. Operating across a wide temperature range from -65°C to 150°C, these RoHS compliant components are ideal for power switching and amplification circuits.
Stmicroelectronics BDW93CFP technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 2.5V |
| Height | 9.3mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 33W |
| Mount | Surface Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 0.08113oz |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BDW93CFP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
