NPN bipolar junction transistor (BJT) in a TO-3 package, featuring a 700V collector-emitter breakdown voltage and a maximum collector current of 8A. This component offers a 1.5kV collector-base voltage and a 1.5kV collector-emitter voltage, with a maximum power dissipation of 150W. It operates within a temperature range of -65°C to 175°C and has a transition frequency of 7MHz. Designed for chassis mount and through-hole termination, this transistor is suitable for high-voltage applications.
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| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 1.5kV |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 10V |
| Gain Bandwidth Product | 7MHz |
| Height | 8.7mm |
| Lead Free | Lead Free |
| Length | 39.5mm |
| Max Collector Current | 8A |
| Max Frequency | 7MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Chassis Mount, Through Hole |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| Transition Frequency | 7MHz |
| DC Rated Voltage | 700V |
| Width | 26.2mm |
| RoHS | Not CompliantNo |
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