STMICROELECTRONICS

BU208A

Datasheet

Stmicroelectronics

BU208A

Name: BU208A Stmicroelectronics
Brand: Stmicroelectronics
SKU: BU208A

NPN BJT Transistor 700V 8A TO-3

NPN bipolar junction transistor (BJT) in a TO-3 package, featuring a 700V collector-emitter breakdown voltage and a maximum collector current of 8A. This component offers a 1.5kV collector-base voltage and a 1.5kV collector-emitter voltage, with a maximum power dissipation of 150W. It operates within a temperature range of -65°C to 175°C and has a transition frequency of 7MHz. Designed for chassis mount and through-hole termination, this transistor is suitable for high-voltage applications.

Frequency7MHz

PackageTO-3

Current Rating8A

MountingChassis Mount, Through Hole

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Technical Specifications

Stmicroelectronics BU208A technical specifications.

General

Package/Case	TO-3
Collector Base Voltage (VCBO)	1.5kV
Collector Emitter Breakdown Voltage	700V
Collector Emitter Saturation Voltage	1V
Collector Emitter Voltage (VCEO)	1.5kV
Collector-emitter Voltage-Max	1V
Current Rating	8A
Emitter Base Voltage (VEBO)	10V
Gain Bandwidth Product	7MHz
Height	8.7mm
Lead Free	Lead Free
Length	39.5mm
Max Collector Current	8A
Max Frequency	7MHz
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Max Power Dissipation	150W
Mount	Chassis Mount, Through Hole
Package Quantity	100
Packaging	Bulk
Polarity	NPN
Power Dissipation	150W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	No
Termination	Through Hole
Transition Frequency	7MHz
DC Rated Voltage	700V
Width	26.2mm