NPN bipolar junction transistor (BJT) in a TO-3 package, featuring a 700V collector-emitter breakdown voltage and a maximum collector current of 8A. This component offers a 1.5kV collector-base voltage and a 1.5kV collector-emitter voltage, with a maximum power dissipation of 150W. It operates within a temperature range of -65°C to 175°C and has a transition frequency of 7MHz. Designed for chassis mount and through-hole termination, this transistor is suitable for high-voltage applications.
Frequency7MHz
PackageTO-3
Current Rating8A
MountingChassis Mount, Through Hole
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Technical Specifications
Stmicroelectronics BU208A technical specifications.
General
Package/Case
TO-3
Collector Base Voltage (VCBO)
1.5kV
Collector Emitter Breakdown Voltage
700V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
1.5kV
Collector-emitter Voltage-Max
1V
Current Rating
8A
Emitter Base Voltage (VEBO)
10V
Gain Bandwidth Product
7MHz
Height
8.7mm
Lead Free
Lead Free
Length
39.5mm
Max Collector Current
8A
Max Frequency
7MHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
150W
Mount
Chassis Mount, Through Hole
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Dissipation
150W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Transition Frequency
7MHz
DC Rated Voltage
700V
Width
26.2mm
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics BU208A Datasheet
Download the complete datasheet for Stmicroelectronics BU208A to view detailed technical specifications.
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