NPN bipolar junction power transistor featuring a 200V collector-emitter breakdown voltage and 7A maximum collector current. This through-hole component offers a 400V collector-base voltage and 1V collector-emitter saturation voltage. It operates with a transition frequency of 10MHz and has a maximum power dissipation of 60W. Packaged in a TO-220AB plastic case, this RoHS compliant device is suitable for various power switching and amplification applications.
Frequency10MHz
PackageTO-220-3
Current Rating7A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BU406 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
200V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
200V
Collector-emitter Voltage-Max
1V
Current Rating
7A
Emitter Base Voltage (VEBO)
6V
Frequency
10MHz
Gain Bandwidth Product
10MHz
Height
9.15mm
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
7A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
10MHz
DC Rated Voltage
150V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BU406 Datasheet
Download the complete datasheet for Stmicroelectronics BU406 to view detailed technical specifications.
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