NPN bipolar junction power transistor featuring a 200V collector-emitter breakdown voltage and 7A maximum collector current. This through-hole component offers a 400V collector-base voltage and 1V collector-emitter saturation voltage. It operates with a transition frequency of 10MHz and has a maximum power dissipation of 60W. Packaged in a TO-220AB plastic case, this RoHS compliant device is suitable for various power switching and amplification applications.
Stmicroelectronics BU406 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 9.15mm |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 150V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BU406 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
