NPN bipolar junction power transistor featuring a 200V collector-emitter breakdown voltage and 8A continuous collector current. This through-hole mounted component offers a maximum power dissipation of 60W and a collector-emitter saturation voltage of 1.5V. The device operates within a temperature range of -65°C to 150°C and is housed in a TO-220-3 plastic package. It is RoHS compliant and lead-free.
PackageTO-220-3
Current Rating8A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BU806 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
200V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
200V
Collector-emitter Voltage-Max
1.5V
Continuous Collector Current
8A
Current Rating
8A
Emitter Base Voltage (VEBO)
6V
Height
15.75mm
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
8A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
200V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BU806 Datasheet
Download the complete datasheet for Stmicroelectronics BU806 to view detailed technical specifications.
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