NPN bipolar junction power transistor featuring a 200V collector-emitter breakdown voltage and 8A continuous collector current. This through-hole mounted component offers a maximum power dissipation of 60W and a collector-emitter saturation voltage of 1.5V. The device operates within a temperature range of -65°C to 150°C and is housed in a TO-220-3 plastic package. It is RoHS compliant and lead-free.
Stmicroelectronics BU806 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 8A |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 15.75mm |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BU806 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
