NPN Bipolar Junction Transistor (BJT) for power applications. Features a 350V collector-emitter breakdown voltage and a 15A continuous collector current. This surface-mount device is housed in a D2PAK package with tin, matte contact plating. Offers a minimum hFE of 300 and a maximum power dissipation of 150W, operating between -65°C and 150°C. RoHS compliant and lead-free.
PackageD2PAK
Current Rating15A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Stmicroelectronics BUB941ZTT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1.8V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 15A |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150W |
| RoHS Compliant | Yes |
| Series | AUTOMOTIVE |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUB941ZTT4 Datasheet
Download the complete datasheet for Stmicroelectronics BUB941ZTT4 to view detailed technical specifications.
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