The BUL1203EFP is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 550V and a maximum collector current of 5A. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 36W. The transistor is RoHS compliant and features a tin, matte contact plating. It is available in a package quantity of 50, packaged in a rail/Tube format.
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BUL1203EFP technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 550V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 10 |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Series | BUL1203EFP |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUL1203EFP Datasheet
Download the complete datasheet for Stmicroelectronics BUL1203EFP to view detailed technical specifications.
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