NPN bipolar junction power transistor with a 4A continuous collector current and 400V collector-emitter breakdown voltage. Features a 700V collector-base voltage, 1.5V collector-emitter saturation voltage, and 9V emitter-base voltage. Housed in a TO-220-3 through-hole package, this silicon transistor offers a maximum power dissipation of 70W and operates within a temperature range of -65°C to 150°C. RoHS compliant.
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| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| hFE Min | 14 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Width | 4.6mm |
| RoHS | Compliant |
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