High voltage, fast-switching NPN power transistor designed for demanding applications. Features a 400V Collector-Emitter Breakdown Voltage and 4A Max Collector Current. Offers a low 500mV Collector-Emitter Saturation Voltage for efficient switching. Packaged in a TO-220 through-hole mount with tin-matte contact plating. Operates across a wide temperature range from -65°C to 150°C with 70W Max Power Dissipation.
PackageTO-220
MountingThrough Hole
PolarityNPN
Power70W
Quick Jump:
Technical Specifications
Stmicroelectronics BUL128D-B technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUL128D-B Datasheet
Download the complete datasheet for Stmicroelectronics BUL128D-B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
