The BUL1403ED is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 3A. It has a maximum power dissipation of 80W and operates over a temperature range of -65°C to 150°C. The transistor is RoHS compliant and lead-free. It is available in a package quantity of 50, packaged in a rail/tube format.
Stmicroelectronics BUL1403ED technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.4kV |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 11V |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
No datasheet is available for this part.
