NPN bipolar junction power transistor with a 450V collector-emitter breakdown voltage and 10A continuous collector current. Features a 1.5V collector-emitter saturation voltage and 15 minimum hFE. This through-hole component is housed in a TO-220 package, offering 100W maximum power dissipation and operating from -65°C to 150°C. It is RoHS compliant and lead-free.
Stmicroelectronics BUL510 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BUL510 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
