High voltage NPN power transistor designed for fast switching applications. Features a 450V collector-emitter breakdown voltage and 8A maximum collector current. With a low 2V collector-emitter saturation voltage and 85W power dissipation, this component is suitable for demanding power management tasks. Packaged in a TO-220 through-hole mount with tin plating, it operates from -65°C to 150°C and is RoHS compliant.
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Stmicroelectronics BUL58D technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 2V |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| hFE Min | 5 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 450V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 85W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 4.6mm |
| RoHS | Compliant |
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