The BULK128D-B is a single NPN bipolar junction transistor with a collector-emitter breakdown voltage of 400V and a maximum collector current of 4A. It is packaged in a SOT-82 3-Pin package and is suitable for through hole mounting. The transistor has a maximum power dissipation of 55W and operates over a temperature range of -65°C to 150°C. The BULK128D-B is RoHS compliant and is manufactured by STMicroelectronics.
Sign in to ask questions about the Stmicroelectronics BULK128D-B datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics BULK128D-B technical specifications.
| Package/Case | SOT-82 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 9V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BULK128 |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BULK128D-B to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
