NPN bipolar junction transistor power module featuring a 125V Collector-Emitter Voltage (VCEO) and 100A maximum collector current. This module offers a 250W maximum power dissipation and a 700mV collector-emitter saturation voltage. Designed for chassis or panel mounting with screw terminals, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Stmicroelectronics BUT30V technical specifications.
| Package/Case | Module |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 125V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 125V |
| Collector-emitter Voltage-Max | 900mV |
| Contact Plating | Nickel |
| Current Rating | 100A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 9.1mm |
| hFE Min | 27 |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 500V Transistors |
| DC Rated Voltage | 125V |
| Width | 25.5mm |
| RoHS | Compliant |
No datasheet is available for this part.
