The BUT32V is a high-power NPN bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 120A. It can handle a maximum power dissipation of 250W and operates within a temperature range of -55°C to 150°C. The transistor is packaged in an ISOTOP-3 package with a screw termination. It is compliant with RoHS regulations but not SVHC compliant. The hFE minimum is 16.
Package300
PolarityNPN
Power250W
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Technical Specifications
Stmicroelectronics BUT32V technical specifications.
General
| Package/Case | 300 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 900mV |
| hFE Min | 16 |
| Max Collector Current | 120A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250W |
| Polarity | NPN |
| Power Dissipation | 250W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Screw |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUT32V Datasheet
Download the complete datasheet for Stmicroelectronics BUT32V to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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