
High current NPN silicon transistor in a TO-247 package. Features a 250V collector-emitter breakdown voltage and a 15A continuous current rating, with a maximum collector current of 45A. Offers a low collector-emitter saturation voltage of 800mV and a maximum power dissipation of 180W. Operates across a wide temperature range from -65°C to 150°C. This through-hole mounted component is RoHS compliant.
Stmicroelectronics BUTW92 technical specifications.
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 20.3mm |
| hFE Min | 9 |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BUTW92 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
