NPN Silicon Power Transistor, 50A max collector current, 450V collector-emitter breakdown voltage. Features 850V collector-base voltage, 1kV collector-emitter voltage, and 600mV collector-emitter saturation voltage. Operates from -65°C to 150°C with 250W power dissipation. Packaged as a module for chassis mounting. RoHS compliant.
PackageModule
Current Rating50A
MountingChassis Mount, Screw
PolarityNPN
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Technical Specifications
Stmicroelectronics BUV298V technical specifications.
General
| Package/Case | Module |
| Collector Base Voltage (VCBO) | 850V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 50A |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 12 |
| Lead Free | Lead Free |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BUV298 |
| DC Rated Voltage | 450V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUV298V Datasheet
Download the complete datasheet for Stmicroelectronics BUV298V to view detailed technical specifications.
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