NPN bipolar junction transistor (BJT) designed for general-purpose applications. Features a 450V collector-emitter breakdown voltage and a 15A maximum collector current. Offers a 1.5V collector-emitter saturation voltage and a 7V emitter-base voltage. Packaged in a TO-247 case with through-hole mounting, this component supports a maximum power dissipation of 125W and operates within a temperature range of -65°C to 150°C. RoHS compliant with tin, matte contact plating.
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Stmicroelectronics BUV48A technical specifications.
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 5V |
| Contact Plating | Tin, Matte |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 20.15mm |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Width | 5.15mm |
| RoHS | Compliant |
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