BUX10

125V 25A NPN Si Power Transistor TO-3

NPN Silicon Power Transistor, TO-3 package, rated for 25A max collector current and 125V collector-emitter voltage. Features a 150W power dissipation, 700mV collector-emitter saturation voltage, and a transition frequency of 8MHz. Operates from -65°C to 200°C, with a minimum hFE of 20. Chassis mountable and RoHS compliant.

Frequency8MHz

PackageTO-3

Current Rating25A

MountingChassis Mount, Through Hole

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Technical Specifications

Stmicroelectronics BUX10 technical specifications.

General

Package/Case	TO-3
Collector Base Voltage (VCBO)	160V
Collector Emitter Breakdown Voltage	125V
Collector Emitter Saturation Voltage	700mV
Collector Emitter Voltage (VCEO)	125V
Collector-emitter Voltage-Max	1.2V
Current Rating	25A
Emitter Base Voltage (VEBO)	7V
Frequency	8MHz
Gain Bandwidth Product	8MHz
Height	8.7mm
hFE Min	20
Lead Free	Lead Free
Length	39.5mm
Max Collector Current	25A
Max Frequency	8MHz
Max Operating Temperature	200°C
Min Operating Temperature	-65°C
Max Power Dissipation	150W
Mount	Chassis Mount, Through Hole
Number of Elements	1
Package Quantity	100
Packaging	Bag
Polarity	NPN
Power Dissipation	150W
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	8MHz
DC Rated Voltage	125V
Width	26.2mm