
NPN Power Transistor, TO-3 package, featuring a 450V Collector-Emitter Breakdown Voltage and a 30A Max Collector Current. This silicon bipolar junction transistor offers a 1kV Collector-Base Voltage and a 450V Collector-Emitter Voltage. With a maximum power dissipation of 250W and a wide operating temperature range from -65°C to 200°C, it is designed for robust power applications. The component supports chassis mount and through-hole mounting with tin contact plating and is RoHS compliant.
Stmicroelectronics BUX98A technical specifications.
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 5V |
| Contact Plating | Tin |
| Current Rating | 30A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 8.7mm |
| Lead Free | Lead Free |
| Length | 39.5mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Through Hole |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Width | 26.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BUX98A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
