Complementary power transistors featuring NPN and PNP polarity, designed for through-hole mounting in a TO-220 package. These bipolar junction transistors offer a maximum collector current of 10A and a collector-emitter breakdown voltage of 80V. With a maximum power dissipation of 50W and a minimum hFE of 60, they are suitable for applications operating between -65°C and 150°C. The component is RoHS compliant and features tin contact plating.
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Stmicroelectronics D44H11 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN, PNP |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Width | 4.6mm |
| RoHS | Compliant |
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