PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V collector-emitter voltage (VCEO) and a 60V collector-base voltage (VCBO). Offers a continuous collector current rating of 8A, with a maximum collector current of 10A. Housed in a TO-220 package with through-hole mounting. Operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 50W. RoHS compliant and lead-free.
Stmicroelectronics D45H8 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | PNP, NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics D45H8 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
