NPN Silicon Power Transistor, module package, featuring a 120A maximum collector current and 150V collector-emitter voltage. Offers a low 1.5V collector-emitter saturation voltage and a high minimum hFE of 1200. Designed for chassis mounting with screw terminals, this RoHS compliant component operates from -55°C to 150°C with a 175W power dissipation.
PackageModule
Current Rating120A
MountingChassis Mount, Screw
PolarityNPN
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Technical Specifications
Stmicroelectronics ESM2012DV technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 120A |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 1200 |
| Lead Free | Lead Free |
| Max Collector Current | 120A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 175W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 175W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | ESM2012 |
| DC Rated Voltage | 120V |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics ESM2012DV Datasheet
Download the complete datasheet for Stmicroelectronics ESM2012DV to view detailed technical specifications.
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