N-channel power MOSFET with 200V drain-source breakdown voltage and 9A continuous drain current. Features 0.35 Ohm maximum drain-source on-resistance and 75W power dissipation. Packaged in a TO-220 through-hole mount, this component offers a gate-to-source voltage of +/-20V and operates within a temperature range of -65°C to 150°C. RoHS compliant with a 170ns reverse recovery time and 10ns turn-on delay.
PackageTO-220
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics IRF630 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
9A
Current Rating
9A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
400mR
Dual Supply Voltage
200V
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
700pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
On-State Resistance
400mR
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
75W
Radiation Hardening
No
Rds On Max
400mR
Reach SVHC Compliant
No
Reverse Recovery Time
170ns
RoHS Compliant
Yes
Series
MESH OVERLAY™ II
Threshold Voltage
3V
Turn-On Delay Time
10ns
DC Rated Voltage
200V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics IRF630 Datasheet
Download the complete datasheet for Stmicroelectronics IRF630 to view detailed technical specifications.
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