IRF630

Datasheet

N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220

Stmicroelectronics

IRF630

Name: IRF630 Stmicroelectronics
Brand: Stmicroelectronics
SKU: IRF630

N-Ch MOSFET, 200V Vdss, 9A Id, 400mR Rds(on), TO-220

N-channel power MOSFET with 200V drain-source breakdown voltage and 9A continuous drain current. Features 0.35 Ohm maximum drain-source on-resistance and 75W power dissipation. Packaged in a TO-220 through-hole mount, this component offers a gate-to-source voltage of +/-20V and operates within a temperature range of -65°C to 150°C. RoHS compliant with a 170ns reverse recovery time and 10ns turn-on delay.

PackageTO-220

Current Rating9A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics IRF630 technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	9A
Current Rating	9A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	200V
Drain-source On Resistance-Max	400mR
Dual Supply Voltage	200V
Gate to Source Voltage (Vgs)	20V
Height	9.15mm
Input Capacitance	700pF
Lead Free	Lead Free
Lead Pitch	2.54mm
Length	10.4mm
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	75W
Mount	Through Hole
Nominal Vgs	3V
Number of Elements	1
On-State Resistance	400mR
Package Quantity	1000
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	75W
Radiation Hardening	No
Rds On Max	400mR
Reach SVHC Compliant	No
Reverse Recovery Time	170ns
RoHS Compliant	Yes
Series	MESH OVERLAY™ II
Threshold Voltage	3V
Turn-On Delay Time	10ns
DC Rated Voltage	200V
Width	4.6mm