Stmicroelectronics
IRF640
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics IRF640 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.56nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
180mR
RoHS Compliant
Yes
Series
MESH OVERLAY™
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics IRF640 Datasheet
Download the complete datasheet for Stmicroelectronics IRF640 to view detailed technical specifications.
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