Stmicroelectronics
IRF640FP
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics IRF640FP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.56nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
180mR
RoHS Compliant
Yes
Series
MESH OVERLAY™
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics IRF640FP Datasheet
Download the complete datasheet for Stmicroelectronics IRF640FP to view detailed technical specifications.
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