N-channel MOSFET with 400V drain-to-source breakdown voltage and 5.5A continuous drain current. Features 100W maximum power dissipation, 750mΩ drain-to-source resistance at 5.5A, and 530pF input capacitance. Operates within a temperature range of -65°C to 150°C. Packaged in a TO-220AB through-hole mount, this component is RoHS compliant and designed for high-power switching applications.
PackageTO-220AB
Voltage400V
Current55A
Current Rating5.5A
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Technical Specifications
Stmicroelectronics IRF730 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.5A |
| Current | 55A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 530pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | PowerMESH™ II |
| Turn-Off Delay Time | 15ns |
| Voltage | 400V |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics IRF730 Datasheet
Download the complete datasheet for Stmicroelectronics IRF730 to view detailed technical specifications.
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