N-channel MOSFET with 400V drain-to-source breakdown voltage and 5.5A continuous drain current. Features 100W maximum power dissipation, 750mΩ drain-to-source resistance at 5.5A, and 530pF input capacitance. Operates within a temperature range of -65°C to 150°C. Packaged in a TO-220AB through-hole mount, this component is RoHS compliant and designed for high-power switching applications.
PackageTO-220AB
Voltage400V
Current55A
Current Rating5.5A
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Technical Specifications
Stmicroelectronics IRF730 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5.5A
Current
55A
Current Rating
5.5A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
400V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
530pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
100W
Rds On Max
1R
RoHS Compliant
Yes
Series
PowerMESH™ II
Turn-Off Delay Time
15ns
Voltage
400V
DC Rated Voltage
400V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics IRF730 Datasheet
Download the complete datasheet for Stmicroelectronics IRF730 to view detailed technical specifications.
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