N-channel Power MOSFET in a TO-247-3 package, featuring a 500V drain-source breakdown voltage and 14A continuous drain current. This component offers a low 380mΩ drain-source on-resistance and a maximum power dissipation of 190W. With a gate-source voltage rating of 30V, it exhibits typical turn-on delay of 25ns and fall time of 30ns. Designed for through-hole mounting, it operates across a temperature range of -65°C to 150°C.
PackageTO-247-3
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics IRFP450 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
No
Series
PowerMESH™ II
Turn-Off Delay Time
170ns
Turn-On Delay Time
25ns
DC Rated Voltage
500V
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics IRFP450 Datasheet
Download the complete datasheet for Stmicroelectronics IRFP450 to view detailed technical specifications.
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