N-channel Power MOSFET in a TO-247-3 package, featuring a 500V drain-source breakdown voltage and 14A continuous drain current. This component offers a low 380mΩ drain-source on-resistance and a maximum power dissipation of 190W. With a gate-source voltage rating of 30V, it exhibits typical turn-on delay of 25ns and fall time of 30ns. Designed for through-hole mounting, it operates across a temperature range of -65°C to 150°C.
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Stmicroelectronics IRFP450 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | No |
| Series | PowerMESH™ II |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
| RoHS | Not CompliantNo |
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