High-voltage, dual-channel gate driver IC for power management applications. Features embedded bootstrap diode, 650mA maximum output current, and operates up to 400kHz. Offers 110ns propagation delay and 30ns fall time. Packaged in SOIC for surface mounting, with a wide operating temperature range of -45°C to 125°C. RoHS compliant and lead-free.
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Stmicroelectronics L6385ED technical specifications.
| Package/Case | SOIC |
| Fall Time | 30ns |
| Frequency | 400kHz |
| Height | 1.25mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Frequency | 400kHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -45°C |
| Max Output Current | 650mA |
| Max Power Dissipation | 750mW |
| Max Supply Voltage | 17V |
| Min Supply Voltage | -300mV |
| Mount | Surface Mount |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Power Dissipation | 750mW |
| Propagation Delay | 110ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 110ns |
| Width | 4mm |
| RoHS | Compliant |
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