This silicon transient voltage suppressor diode features a breakdown voltage range of 47.8V to 52.8V and can operate at temperatures up to 175°C. It is a unidirectional diode with a single terminal position and is constructed from a silicon diode element material. The diode is available in a R-PSSO-G2 package type, suitable for surface mount applications.
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Stmicroelectronics LDP01-50AY technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 43 |
| Breakdown Voltage-Min | 47.8 |
| Breakdown Voltage-Max | 52.8 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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