
The LET9120 is a dual common source N-channel RF transistor with a maximum drain source voltage of 80V and maximum continuous drain current of 18A. It has a maximum frequency of 1600 MHz and maximum power dissipation of 200W. The transistor is packaged in a M246 case with a seated plane height of 5.08mm and can be mounted using screws. It operates over a temperature range of -65°C to 200°C.
Stmicroelectronics LET9120 technical specifications.
| Package Family Name | M246 |
| Package/Case | Case M-246 |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 29.08(Max) |
| Package Width (mm) | 5.97(Max) |
| Package Height (mm) | 5.08(Max) |
| Seated Plane Height (mm) | 5.08(Max) |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 80V |
| Maximum Continuous Drain Current | 18A |
| Maximum Frequency | 1600MHz |
| Maximum Power Dissipation | 200000mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Typical Power Gain | 18dB |
| Output Power | 150(Typ)W |
| Typical Input Capacitance @ Vds | 58@28VpF |
| Cage Code | SCR76 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Stmicroelectronics LET9120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.