Stmicroelectronics
LET9120M
Dual N-Channel Enhancement Mode RF Transistor, 80V, 18A, 1000MHz, Screw Mount
The LET9120M is a dual N-channel enhancement mode RF transistor from Stmicroelectronics. It features a maximum drain source voltage of 80V and a maximum continuous drain current of 18A. The device operates within a temperature range of -65°C to 200°C and has a maximum frequency of 1000MHz. The LET9120M is designed for screw mounting and has a typical power gain of 18.
PackageCase M-252
MountingScrew
Power120(Min)W
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Technical Specifications
Stmicroelectronics LET9120M technical specifications.
General
| Package/Case | Case M-252 |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 34.16 |
| Package Width (mm) | 10.34(Max) |
| Package Height (mm) | 5.33(Max) |
| Seated Plane Height (mm) | 5.33(Max) |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 80V |
| Maximum Continuous Drain Current | 18A |
| Maximum Frequency | 1000MHz |
| Maximum Power Dissipation | 217000mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Typical Power Gain | 18dB |
| Output Power | 120(Min)W |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics LET9120M Datasheet
Download the complete datasheet for Stmicroelectronics LET9120M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.