The MD1803DFX is a high-power NPN bipolar junction transistor with a collector-emitter breakdown voltage of 700V and a maximum collector current of 10A. It can handle a maximum power dissipation of 57W and operates within a temperature range of -65°C to 150°C. The transistor is available in a through-hole package and is compliant with RoHS regulations. It is suitable for use in high-power applications requiring a high current and voltage handling capability.
MountingThrough Hole
PolarityNPN
Power57W
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Technical Specifications
Stmicroelectronics MD1803DFX technical specifications.
General
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Voltage (VCEO) | 700V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 10A |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 5.5 |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 57W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 57W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MD1803DFX Datasheet
Download the complete datasheet for Stmicroelectronics MD1803DFX to view detailed technical specifications.
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