
PNP Darlington bipolar junction transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage (VCEO) and a continuous collector current rating of -2A. Offers a maximum power dissipation of 20W and a high DC current gain (hFE) of 200. Packaged in a TO-252 (DPAK) surface mount package, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
Stmicroelectronics MJD117T4 technical specifications.
| Package/Case | TO-252 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 2.4mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 20uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| DC Rated Voltage | -100V |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics MJD117T4 to view detailed technical specifications.
No datasheet is available for this part.