PNP Darlington bipolar junction transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage (VCEO) and a continuous collector current rating of -2A. Offers a maximum power dissipation of 20W and a high DC current gain (hFE) of 200. Packaged in a TO-252 (DPAK) surface mount package, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
PackageTO-252
Current Rating-2A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics MJD117T4 technical specifications.
General
Package/Case
TO-252
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
3V
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Height
2.4mm
hFE Min
200
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
100V
Max Collector Current
20uA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
20W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
20W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
25MHz
DC Rated Voltage
-100V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics MJD117T4 Datasheet
Download the complete datasheet for Stmicroelectronics MJD117T4 to view detailed technical specifications.
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