NPN bipolar junction transistor (BJT) in a TO-252 surface-mount package. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. Offers a 1.1V collector-emitter saturation voltage and a 2MHz transition frequency. Operates from -65°C to 150°C with a 20W maximum power dissipation. RoHS compliant and lead-free.
Frequency2MHz
PackageTO-252
Current Rating10A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics MJD3055T4 technical specifications.
General
Package/Case
TO-252
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
8V
Current Rating
10A
Emitter Base Voltage (VEBO)
5V
Frequency
2MHz
Gain Bandwidth Product
2MHz
Height
2.4mm
hFE Min
20
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
60V
Max Collector Current
10A
Max Frequency
2MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
20W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
20W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
2MHz
DC Rated Voltage
60V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics MJD3055T4 Datasheet
Download the complete datasheet for Stmicroelectronics MJD3055T4 to view detailed technical specifications.
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