NPN Bipolar Junction Transistor (BJT) for low voltage applications. Features a 100V collector-emitter breakdown voltage and 3A continuous collector current. Surface mountable in a TO-252 package, this transistor offers a maximum power dissipation of 15W and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and lead-free.
PackageTO-252
Current Rating3A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Stmicroelectronics MJD31CT4 technical specifications.
General
| Package/Case | TO-252 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 2.4mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJD31CT4 Datasheet
Download the complete datasheet for Stmicroelectronics MJD31CT4 to view detailed technical specifications.
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