
Complementary power transistors designed for surface mount applications. Features include a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. These NPN and PNP transistors offer a maximum power dissipation of 20W and operate within a temperature range of -55°C to 150°C. Packaged in DPAK for tape and reel distribution, these RoHS compliant components are ideal for demanding electronic circuits.
Stmicroelectronics MJD44H11T4 technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 2.4mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| DC Rated Voltage | 80V |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics MJD44H11T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
