NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A. This single-element transistor offers a maximum power dissipation of 20000mW and a minimum DC current gain of 60. Housed in a TO-252 DPAK package with gull-wing leads, it operates within a temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics MJD44H11T4-A technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
8A
Maximum Power Dissipation
20000mW
Minimum DC Current Gain
60@2A@1V|40@4A@1V
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics MJD44H11T4-A Datasheet
Download the complete datasheet for Stmicroelectronics MJD44H11T4-A to view detailed technical specifications.
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